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1 mrf9060mr1 MRF9060MBR1 motorola rf device data the rf sub?micron mosfet line n?channel enhancement?mode lateral mosfets designed for broadband commercial and industrial applications with frequen- cies up to 1.0 ghz. the high gain and broadband performance of these devices make them ideal for large?signal, common?source amplifier applications in 26 volt base station equipment. ? typical performance at 945 mhz, 26 volts output power ? 60 watts pep power gain ? 18.0 db efficiency ? 40% (two tones) imd ? ?31.5 dbc ? integrated esd protection ? capable of handling 5:1 vswr, @ 26 vdc, 945 mhz, 60 watts cw output power ? excellent thermal stability ? characterized with series equivalent large?signal impedance parameters ? to?270 dual lead available in tape and reel. r1 suffix = 500 units per 24 mm, 13 inch reel. ? to?272 dual lead available in tape and reel. r1 suffix = 500 units per 44 mm, 13 inch reel. maximum ratings rating symbol value unit drain?source voltage v dss 65 vdc gate?source voltage v gs ?0.5, +15 vdc total device dissipation @ t c = 25 c derate above 25 c p d 223 1.79 watts w/ c storage temperature range t stg ?65 to +150 c operating junction temperature t j 175 c thermal characteristics characteristic symbol max unit thermal resistance, junction to case r jc 0.56 c/w note ? caution ? mos devices are susceptible to damage from electrostatic charge. reasonable precautions in handling and packaging mos devices should be observed. order this document by mrf9060m/d semiconductor technical data 945 mhz, 60 w, 26 v lateral n?channel broadband rf power mosfets case 1337?01, style 1 to?272 dual lead plastic MRF9060MBR1 case 1265?07, style 1 to?270 dual lead plastic mrf9060mr1 ? motorola, inc. 2002 rev 4
mrf9060mr1 MRF9060MBR1 2 motorola rf device data esd protection characteristics test conditions class human body model 1 (minimum) machine model m2 (minimum) charge device model mrf9060mr1 MRF9060MBR1 c6 (minimum) c5 (minimum) moisture sensitivity level test methodology rating per jesd 22?a113 mrf9060mr1 MRF9060MBR1 1 3 electrical characteristics (t c = 25 c unless otherwise noted) characteristic symbol min typ max unit off characteristics zero gate voltage drain leakage current (v ds = 65 vdc, v gs = 0 vdc) i dss ? ? 10 adc zero gate voltage drain leakage current (v ds = 26 vdc, v gs = 0 vdc) i dss ? ? 1 adc gate?source leakage current (v gs = 5 vdc, v ds = 0 vdc) i gss ? ? 1 adc on characteristics gate threshold voltage (v ds = 10 vdc, i d = 200 adc) v gs(th) 2 2.8 4 vdc gate quiescent voltage (v ds = 26 vdc, i d = 450 madc) v gs(q) 3 3.7 5 vdc drain?source on?voltage (v gs = 10 vdc, i d = 1.3 adc) v ds(on) ? 0.21 0.4 vdc forward transconductance (v ds = 10 vdc, i d = 4 adc) g fs ? 5.3 ? s dynamic characteristics input capacitance (v ds = 26 vdc 30 mv(rms)ac @ 1 mhz, v gs = 0 vdc) c iss ? 101 ? pf output capacitance (v ds = 26 vdc 30 mv(rms)ac @ 1 mhz, v gs = 0 vdc) c oss ? 53 ? pf reverse transfer capacitance (v ds = 26 vdc 30 mv(rms)ac @ 1 mhz, v gs = 0 vdc) c rss ? 2.5 ? pf (continued)
3 mrf9060mr1 MRF9060MBR1 motorola rf device data electrical characteristics ? continued (t c = 25 c unless otherwise noted) characteristic symbol min typ max unit functional tests (in motorola test fixture, 50 ohm system) two?tone common?source amplifier power gain (v dd = 26 vdc, p out = 60 w pep, i dq = 450 ma, f1 = 945.0 mhz, f2 = 945.1 mhz) g ps 17 18 ? db two?tone drain efficiency (v dd = 26 vdc, p out = 60 w pep, i dq = 450 ma, f1 = 945.0 mhz, f2 = 945.1 mhz) 37 40 ? % 3rd order intermodulation distortion (v dd = 26 vdc, p out = 60 w pep, i dq = 450 ma, f1 = 945.0 mhz, f2 = 945.1 mhz) imd ? ?31.5 ?28 dbc input return loss (v dd = 26 vdc, p out = 60 w pep, i dq = 450 ma, f1 = 945.0 mhz, f2 = 945.1 mhz) irl ? ?14.5 ?9 db two?tone common?source amplifier power gain (v dd = 26 vdc, p out = 60 w pep, i dq = 450 ma, f1 = 930.0 mhz, f2 = 930.1 mhz and f1 = 960.0 mhz, f2 = 960.1 mhz) g ps ? 18 ? db two?tone drain efficiency (v dd = 26 vdc, p out = 60 w pep, i dq = 450 ma, f1 = 930.0 mhz, f2 = 930.1 mhz and f1 = 960.0 mhz, f2 = 960.1 mhz) ? 40 ? % 3rd order intermodulation distortion (v dd = 26 vdc, p out = 60 w pep, i dq = 450 ma, f1 = 930.0 mhz, f2 = 930.1 mhz and f1 = 960.0 mhz, f2 = 960.1 mhz) imd ? ?31 ? dbc input return loss (v dd = 26 vdc, p out = 60 w pep, i dq = 450 ma, f1 = 930.0 mhz, f2 = 930.1 mhz and f1 = 960.0 mhz, f2 = 960.1 mhz) irl ? ?12.5 ? db
mrf9060mr1 MRF9060MBR1 4 motorola rf device data figure 1. 930?960 mhz broadband test circuit schematic z10 0.060 x 0.520 microstrip z11 0.360 x 0.270 microstrip z12 0.060 x 0.270 microstrip z13 0.130 x 0.060 microstrip z14 0.300 x 0.060 microstrip z15 0.210 x 0.060 microstrip z16 0.600 x 0.060 microstrip z17 0.290 x 0.060 microstrip z18 0.340 x 0.060 microstrip z1 0.240 x 0.060 microstrip z2 0.240 x 0.060 microstrip z3 0.500 x 0.100 microstrip z4 0.100 x 0.270 x 0.080 , taper z5 0.330 x 0.270 microstrip z6 0.120 x 0.270 microstrip z7 0.270 x 0.520 x 0.140 , taper z8 0.240 x 0.520 microstrip z9 0.340 x 0.520 microstrip table 1. 930?960 mhz broadband test circuit component designations and values part description value, p/n or dwg manufacturer b1 short ferrite bead 95f786 newark b2 long ferrite bead 95f787 newark c1, c7, c13, c14 47 pf chip capacitors, b case 100b470jp 500x atc c2, c3, c11 0.8?8.0 gigatrim variable capacitors 44f3360 newark c4, c5 11 pf chip capacitors, b case (mrf9060mr1) 10 pf chip capacitors, b case (MRF9060MBR1) 100b110jp 500x 100b100jp 500x atc c6, c15, c16 10 f, 35 v tantalum chip capacitors 93f2975 newark c8, c9 10 pf chip capacitors, b case 100b100jp 500x newark c10 3.9 pf chip capacitor, b case 100b3r9cp 500x atc c12 1.7 pf chip capacitor, b case 100b1r7bp 500x atc c17 220 f electrolytic chip capacitor 14f185 newark l1, l2 12.5 nh inductors a04t?5 coilcraft n1, n2 n?type panel mount, stripline 3052?1648?10 avnet wb1, wb2 15 mil brass wear blocks board material 30 mil glass teflon ? , r = 2.55 copper clad, 2 oz cu rf?35?0300 taconic pcb etched circuit board to?270/to?272 surface/bolt dselectronics
5 mrf9060mr1 MRF9060MBR1 motorola rf device data cut out area mrf9060mb figure 2. 930?960 mhz broadband test circuit component layout mrf9060m
mrf9060mr1 MRF9060MBR1 6 motorola rf device data figure 3. class ab broadband circuit performance figure 4. power gain versus output power figure 5. intermodulation distortion versus output power figure 6. intermodulation distortion products versus output power figure 7. power gain and efficiency versus output power
7 mrf9060mr1 MRF9060MBR1 motorola rf device data figure 8. power gain, efficiency, and imd versus output power
mrf9060mr1 MRF9060MBR1 8 motorola rf device data f mhz z source ? z load ? 930 945 960 0.63 + j0.57 0.57 + j0.45 0.60 + j0.41 1.8 + j0.84 1.7 + j0.55 1.6 + j0.36 figure 9. series equivalent input and output impedance ? z source = test circuit impedance as measured from gate to ground. z load = test circuit impedance as measured from drain to ground.

9 mrf9060mr1 MRF9060MBR1 motorola rf device data notes
mrf9060mr1 MRF9060MBR1 10 motorola rf device data package dimensions to?270 dual lead plastic case 1265?07 issue f bottom view a1 2x e d1 e4 e1 d2 e3 a2 exposed heatsink area a b d h pin one id ???? ???? ???? ???? ???? ???? ???? ???? ???? 2x b1 2x d3 ? ? ? ? ? ? ? ? ? note 7 c1 f zone j e2 2x a pin 1 pin 2 pin 3 mrf9060mr1
11 mrf9060mr1 MRF9060MBR1 motorola rf device data package dimensions MRF9060MBR1 case 1337?01 issue o to?272 dual lead plastic h c a b 2x b1 a e1 r1 pin one id d d1 e pin one id y y 1 view y?y pin 3 a1 a2 !"#$# 7 2x c1 2
mrf9060mr1 MRF9060MBR1 12 motorola rf device data motorola reserves the right to make changes without further notice to any products herein. motorola makes no warranty, represen tation, or guarantee regarding the suitability of its products for any particular purpose, nor does motorola assume any liability arising out of the applicati on or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. ?typical? param eters can and do vary in different applications and actual performance may vary over time. all operating parameters, including ?typicals?, must be validated for e ach customer application by customer?s technical experts. motorola does not convey any license under its patent rights nor the rights of others. motorola p roducts are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to s upport or sustain life, or for any other application in which the failure of the motorola product could create a situation where personal injury or death may occur. should buyer purch ase or use motorola products for any such unintended or unauthorized application, buyer shall indemnify and hold motorola and its officers, employe es, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly o r indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that motorola was negligent reg arding the design or manufacture of the part. motorola and the stylized m logo are registered in the us patent & trademark office. all other product or service names are the property of their respective owners. motorola, inc. is an equal opportunity/affirmative action employer. motorola, inc. 2002. how to reach us: usa/europe/locations not listed : motorola literature distribution; p.o. box 5405, denver, colorado 80217. 1?303?675?2140 or 1?800?441?2447 japan : motorola japan ltd.; sps, technical information center, 3?20?1, minami?az abu. minato?ku, tokyo 106?8573 japan. 8 1?3?3440?3569 asia/pacific : motorola semiconductors h.k. ltd.; silicon harbour centre, 2 da i king street, tai po industrial estate, tai po, n.t. hong kon g. 852?26668334 technical information center: 1?800?521?6274 home page : http://www .motorola.com/semiconductors/ mrf9060m/d ?

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